MG100HF12LEC1
Product Description

Core Changzheng IGBT adopts advanced trench gate field stop (Trench FS) technology, combined with the internationally leading process platform, and is committed to providing customers with stable, reliable and excellent performance products.
Core Changzheng 1GBT optimizes and compromises static parameters, dynamic parameters and short-circuit parameters to achieve the best performance according to the special needs of different application fields.
Core Changzheng currently provides 1GBT single transistors with voltage levels of 600V~1200V. The packaging forms include T0-220, T0220-FP, TO-247, T0.3P, TO-247PLUS, TO-263 and T-264, etc., suitable for inverters Welding machines, general frequency conversion, motor control, uninterruptible power supplies, solar inverters and other applications.
MG100HF12LEC1
Feature Introduction

1. Lower saturation voltage drop, faster switching speed, and stronger short-circuit withstand capability;
2. Parameters such as threshold voltage and saturation voltage drop have good consistency, and the saturation voltage drop has a positive temperature coefficient, making it easy to use in parallel;
3. High reliability, maximum junction temperature 150°C~175°c;
4. Built-in fast recovery diode with good reverse recovery characteristics
MG100HF12LEC1
Naming Rules
